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Freescale Semiconductor Technical Data
Document Number: MW4IC2230N Rev. 6, 5/2006
RF LDMOS Wideband Integrated Power Amplifiers
The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 31 dB Drain Efficiency -- 15% ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth Driver Application * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 31.5 dB ACPR @ 5 MHz = - 53.5 dBc in 3.84 MHz Bandwidth * Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW Output Power * Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 10 mW to 5 W CW Pout. Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function * On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) * Integrated ESD Protection * 200C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW4IC2230NBR1 MW4IC2230GNBR1
2110 - 2170 MHz, 30 W, 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC2230NBR1
CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW4IC2230GNBR1
VRD1 VRG1 VDS2 VDS1
GND VDS2 VRD1 VRG1 VDS1 3 Stages IC RFin
1 2 3 4 5 6 7 8 9 10 11
16 15
GND
14
VDS3/ RFout
RFin
VDS3/RFout
VGS1 VGS2 VGS3
VGS1 VGS2 VGS3 GND
13 12 (Top View)
GND
Quiescent Current Temperature Compensation
Note: Exposed backside flag is source terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MW4IC2230NBR1 MW4IC2230GNBR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Channel Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value - 0.5, +65 - 0.5, +8 - 65 to +175 200 20 Unit Vdc Vdc C C dBm
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Stage 1 Stage 2 Stage 3 Symbol RJC Value (1) 10.5 5.1 2.3 Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pout = 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single - carrier W - CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Input Return Loss Adjacent Channel Power Ratio Pout = 0.4 W Avg. Pout = 1.26 W Avg. Gps IRL ACPR -- -- - 53.5 - 52 - 50 -- 29 -- 31.5 - 25 -- - 10 dB dB dBc
Typical Performances (In Freescale Test Fixture tuned for 0.4 W Avg. W - CDMA driver) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, 2110 MHz1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977. (continued)
MW4IC2230NBR1 MW4IC2230GNBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Reference Application Circuit tuned for 2 - carrier W - CDMA signal) VDD = 28 Vdc, Pout = 0.4 W Avg., IDQ1 = 60 mA, IDQ2 = 400 mA, IDQ3 = 245 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss Gps IM3 ACPR IRL -- -- -- -- 31.5 - 52 - 55 - 26 -- -- -- -- dB dBc dBc dB
MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 3
VD2 + VD1 + C1 RF INPUT C6 Z1 6 C10 VG1 VG2 VG3 R1 R2 7 NC 8 9 10 11 Quiescent Current Temperature Compensation NC 13 12 + R3 C8 C4 C11 C12 C2 C5 1 2 3 NC 4 NC 5 DUT 16 NC 15 Z2 C7 + C3
VD3
C9 14 Z4 Z5 Z6 Z7
RF OUTPUT
Z3
Z1 Z2, Z3 Z4 Z5
2.180 x 0.090 Microstrip 0.040 x 0.430 Microstrip 0.350 x 0.240 Microstrip 0.420 x 0.090 Microstrip
Z6 Z7 PCB
1.120 x 0.090 Microstrip 0.340 x 0.090 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
Figure 3. MW4IC2230NBR1(GNBR1) Test Circuit Schematic Table 6. MW4IC2230NBR1(GNBR1) Test Circuit Component Designations and Values
Part C1, C2, C3, C4 C5, C6, C7, C8, C12 C9, C10 C11 R1, R2, R3 Description 10 F, 35 V Tantalum Capacitors 8.2 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitors 0.3 pF 100B Chip Capacitor 1.8 kW Chip Resistors (1206) Part Number TAJD106K035 100B8R2CW 100B1R8BW 100B0R3BW Manufacturer AVX ATC ATC ATC
MW4IC2230NBR1 MW4IC2230GNBR1 4 RF Device Data Freescale Semiconductor
C2 VD2
MW4IC2230 Rev 1
C3
VD1
VD3 C5
C7
C1 C6 C12 C9 C11
C10 R1 VG1 R2 VG2 R3 VG3 C8
GND
C4
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 4. MW4IC2230NBR1(GNBR1) Test Circuit Component Layout
MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
32 Gps 31 G ps , POWER GAIN (dB) 30 29 28 27 26 2050 VDD = 28 Vdc Pout = 26 dBm (Avg.) IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA 1-Carrier W-CDMA ACPR -10 -20 -30 -40 -50 -60 2100 2150 f, FREQUENCY (MHz) 2200 0 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
IRL
Figure 5. Single - Carrier W - CDMA Wideband Performance @ Pout = 26 dBm
IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
32 Gps 31 G ps , POWER GAIN (dB) 30 IRL 29 28 27 26 2050 VDD = 28 Vdc Pout = 31 dBm (Avg.) IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA 1-Carrier W-CDMA
0 -10 -20 -30 -40 ACPR -50 -60 2100 2150 f, FREQUENCY (MHz) 2200
-40 VDD = 28 Vdc IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA f = 2140 MHz, 1-Carrier W-CDMA TC = 85_C
-45
25_C
-50
-30_C
-55
-60 0.1 1 Pout, OUTPUT POWER (WATTS) AVG. 10
Figure 6. Single - Carrier W - CDMA Wideband Performance @ Pout = 31 dBm
Figure 7. Adjacent Channel Power Ratio versus Output Power
IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) IM3, INTERMODULATION DISTORTION (dBc)
33 32 G ps , POWER GAIN (dB) 31 30 29 28 27 2050 VDD = 28 Vdc Pout = 26 dBm (Avg.) IDQ1 = 60 mA, IDQ2 = 400 mA, IDQ3 = 245 mA 2-Carrier W-CDMA Gps IRL
0 -10 -20 -30 -40 IM3 ACPR 2100 2150 f, FREQUENCY (MHz) 2200 -50 -60
Figure 8. 2 - Carrier W - CDMA Wideband Performance
MW4IC2230NBR1 MW4IC2230GNBR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 2
2.00 P3dB = 46.3 dBm (43 W) P1dB = 45.3 dBm (34 W) Actual DELAY (ns) Ideal 1.95 1.90 1.85 1.80 1.75 1.70 1.65 1.60 1.55 24 1.50 1950 2000 2050 2100 2150 2200 2250 2300 VDD = 28 Vdc, Small Signal IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA
Pout , OUTPUT POWER (dBm)
VDD = 28 Vdc IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pulsed CW, 8 sec(on), 1 msec(off) f = 2140 MHz 4 6 8 10 12 14 16 18 20 22
Pin, INPUT POWER (dBm)
f, FREQUENCY (MHz)
Figure 9. Output Power versus Input Power
1.E+09 MTTF FACTOR (HOURS X AMPS 2 ) 3rd Stage 2nd Stage 1.E+07 1st Stage
Figure 10. Delay versus Frequency
1.E+08
1.E+06
1.E+05
1.E+04 90
100
110
120
130
140
150
160
170
180 190
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 11. MTTF Factor versus Temperature Junction
MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 7
Zload* f = 2230 MHz
Zin* f = 2050 MHz
f = 2050 MHz f = 2230 MHz
Zo = 50
VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pout = 26 dBm f MHz 2050 2110 2140 2170 2230 Zin Zin 42.18 + j1.49 41.06 - j1.30 40.49 - j2.42 40.05 - j3.45 39.29 - j6.31 Zload 8.52 - j0.46 8.58 - j0.20 8.63 - j0.09 8.69 - j0.01 8.81 + j0.04
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Z
in
Z
load
Figure 12. Series Equivalent Input and Load Impedance MW4IC2230NBR1 MW4IC2230GNBR1 8 RF Device Data Freescale Semiconductor
NOTES
MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
MW4IC2230NBR1 MW4IC2230GNBR1 10 RF Device Data Freescale Semiconductor
MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 11
MW4IC2230NBR1 MW4IC2230GNBR1 12 RF Device Data Freescale Semiconductor
MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 13
MW4IC2230NBR1 MW4IC2230GNBR1 14 RF Device Data Freescale Semiconductor
MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 15
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MW4IC2230NBR1 MW4IC2230GNBR1
Rev. 16 6, 5/2006 Document Number: MW4IC2230N
RF Device Data Freescale Semiconductor

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